silicon rf power semiconductors rd12mvp1 rohs compliance, silicon mosfet power transistor, 175mhz, 10w rd12mvp1 17 aug 2010 1/8 electrostatic sensitive device observe handling precautions index mark [gate] 1.8+/-0.1 0.7+/-0.1 terminal no. (a)drain [output] (b)source [gnd] (c)gate [input] (d)source (b) (b) 0.95+/-0.2 2.6+/-0.2 4.2+/-0.2 5.6+/-0.2 7.0+/-0.2 (c) 0.65+/-0.2 (a) 8.0+/-0.2 6.2+/-0.2 notes: 1. ( ) typical value unit:mm (d) 0.2+/-0.05 top view side view bottom view side view (3.6) (4.5) standoff = max 0.05 detail a detail a description rd12mvp1 is a mos fet type transistor specifically designed for vhf rf power amplifiers applications. features ?high power gain pout>10w, gp>13db@vdd=7.2v,f=175mhz ?high efficiency: 55%min. (175mhz) ?no gate protection diode application for output stage of high power amplifiers in vhf band mobile radio sets. rohs compliant rd12mvp1 is a rohs compliant product. rohs compliance is indicating by the letter ?g? after the lot marking. this product includes the lead in high melting temperature type solders. however, it applicabl e to the following exceptions of rohs directions. 1.lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.) absolute maximum ratings (tc=25 c , unless otherwise noted) symbol parameter conditions ratings unit v dss drain to source voltage v gs =0v 50 v v gss gate to source voltage v ds =0v -5 to +20 v id drain current 4.0 a pin input power zg=zl=50 ? 1.0 w pch channel dissipation tc=25 c 125 w tj junction temperature +150 c tstg storage temperature -40 to +125 c rthj-c thermal resistance junction to case 1.5 c/w note: above parameter s are guaranteed independently. electrical characteristics (tc=25 c , unless otherwise noted) limits unit symbol parameter conditions min. typ. max. i dss zero gate voltage drain current v ds =17v, v gs =0v - - 10 ua i gss gate to source leak current v gs =10v, v ds =0v - - 1.0 ua v th gate threshold voltage v ds =12v, i ds =1ma 1.8 - 4.4 v pout output power 10 12 - w d drain efficiency f=175mhz,v dd =7.2v pin=0.5w,idq=1.0a 55 57 - % vswrt load vswr tolerance v dd =9.5v,po=10w(pin control) f=175mhz,idq=1.0a,zg=50 ? load vswr=20:1(all phase) no destroy - note: above parameters, ratings, limit s and conditions are subject to change. outline drawing
silicon rf power semiconductors rd12mvp1 rohs compliance, silicon mosfet power transistor, 175mhz, 10w rd12mvp1 17 aug 2010 2/8 electrostatic sensitive device observe handling precautions typical characteristics channel dissipat ion v s. am bient t em perat ure 0 10 20 30 40 50 60 0 40 80 120 160 200 ambient temperature ta(deg:c.) channel dissipation pch(w ) ,,, on pcb with ter mal sheet and heat- sink ( size : 41 x 55mm, t=7.2 mm) *pcb: glass epoxy (size : 46.4 x 40.0mm, t=0.8 mm) ther mal sheet: geltec cooh- 4000( t=0.5mm) fr ee air vgs-ids characteristics 0 1 2 3 4 5 6 7 01234567 vgs(v) ids(a) ta=+ 25c vds=10v ids vds vs. ciss characteristics 0 20 40 60 80 100 120 140 160 0 5 10 15 20 vds(v) ciss(pf) ta=+ 25c f=1mhz vds vs. coss characteristics 0 20 40 60 80 100 120 140 160 0 5 10 15 20 vds(v) coss(pf) ta=+ 25c f=1mhz vds vs. crss characteristics 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 vds(v) crss(pf) ta=+25c f=1mhz vds-ids characteristics 0 1 2 3 4 5 6 7 8 9 0123456789 vds(v) ids(a) ta=+ 25c vg s=7.5v vg s=6.5v vg s=5.5v vg s=4.5v
silicon rf power semiconductors rd12mvp1 rohs compliance, silicon mosfet power transistor, 175mhz, 10w rd12mvp1 17 aug 2010 3/8 electrostatic sensitive device observe handling precautions typical characteristics pin-po characteristics @f=175mhz 0 10 20 30 40 0 5 10 15 20 25 30 pin(dbm) po(dbm) , gp(db) , idd(a ) 0 20 40 60 80 d(%) ta=+ 25c f= 175mhz vdd=7.2v idq =1.0a po 3 33 gp pin-po characteristics @f=175mhz 0 2 4 6 8 10 12 14 0.0 0.5 1.0 1.5 pin ( w) pout(w) , idd(a) 20 30 40 50 60 70 80 90 d(%) po d idd ta= 25c f=175m hz vdd= 7.2v idq = 1.0a vdd-po characteristics @f=175mhz 5 10 15 20 25 30 4681012 vdd(v) po(w) 1 2 3 4 5 6 idd(a) po idd ta= 25c f=175m hz pin= 0.6w idq = 1.0a zg =zi=50 ohm
silicon rf power semiconductors rd12mvp1 rohs compliance, silicon mosfet power transistor, 175mhz, 10w rd12mvp1 17 aug 2010 4/8 electrostatic sensitive device observe handling precautions test circuit (f=175mhz) 47pf l2:43.7nh,6turns,d:0.43mm,2.46mm(outside diameter) w w rd12mvp1 14mm 9.5mm 24pf 100pf 330pf rf-in 330pf vdd vgg 19mm 4.7k ohm 3mm 9.5mm 3mm 22uf,50v c2 c1 l1 rf-out 19mm 54pf w:line width=1.0mm l1:10.8nh,4turns,d:0.43mm,1.66mm(outside diameter) c1,c2:2200pf note:board material= glass-epoxy substrate micro strip line width=1.3mm/50ohm,er=4.8,t=0.8mm 175mhz 9mm 47pf l2 17mm 3.5mm
silicon rf power semiconductors rd12mvp1 rohs compliance, silicon mosfet power transistor, 175mhz, 10w rd12mvp1 17 aug 2010 5/8 electrostatic sensitive device observe handling precautions rd12mvp1 s-parameter data (@vdd=7.2v, id=500ma) freq. [mhz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 100 0.782 -165.5 6.105 69.0 0.024 -16.8 0.743 -162.7 125 0.801 -166.9 4.716 62.4 0.022 -20.5 0.766 -164.0 150 0.817 -168.0 3.724 56.4 0.021 -25.7 0.783 -165.6 175 0.833 -168.8 3.023 51.6 0.019 -27.3 0.799 -166.4 200 0.847 -169.7 2.519 47.5 0.016 -31.1 0.825 -167.2 225 0.860 -170.6 2.137 43.5 0.015 -30.0 0.845 -167.7 250 0.872 -171.6 1.828 39.6 0.013 -34.0 0.864 -168.6 275 0.882 -172.4 1.569 36.0 0.012 -30.9 0.871 -169.6 300 0.894 -173.0 1.361 33.4 0.010 -31.7 0.879 -170.4 325 0.901 -173.5 1.193 31.0 0.008 -24.1 0.888 -171.3 350 0.910 -174.2 1.062 28.5 0.007 -20.9 0.901 -172.1 375 0.917 -175.2 0.947 25.9 0.006 -13.8 0.915 -172.9 400 0.918 -176.1 0.844 23.5 0.005 -1.5 0.918 -173.6 425 0.923 -176.7 0.756 21.5 0.004 16.0 0.917 -174.4 450 0.930 -177.2 0.683 20.4 0.005 35.4 0.922 -174.8 475 0.933 -177.7 0.623 18.7 0.005 43.3 0.928 -175.5 500 0.938 -178.1 0.568 17.2 0.006 53.6 0.935 -176.3 525 0.939 -178.8 0.520 15.7 0.007 58.5 0.943 -176.8 550 0.942 -179.3 0.477 14.3 0.008 63.6 0.941 -177.1 575 0.943 179.7 0.439 13.3 0.009 68.8 0.941 -177.8 600 0.946 179.5 0.407 12.2 0.011 73.9 0.945 -178.3 625 0.950 179.1 0.378 11.3 0.011 72.4 0.949 -178.9 650 0.950 178.8 0.350 10.4 0.012 74.8 0.950 -179.5 675 0.953 178.3 0.327 9.8 0.013 79.1 0.952 -179.8 700 0.952 177.9 0.306 8.9 0.014 77.0 0.954 179.8 725 0.954 177.5 0.286 8.3 0.015 77.2 0.951 179.4 750 0.955 176.9 0.268 7.7 0.016 79.2 0.955 178.9 775 0.954 176.4 0.252 7.2 0.018 78.9 0.957 178.6 800 0.955 176.3 0.238 7.0 0.018 79.9 0.958 178.1 825 0.958 175.9 0.225 6.4 0.020 78.9 0.961 177.7 850 0.958 175.6 0.213 5.9 0.021 80.1 0.954 177.5 875 0.956 175.1 0.203 5.5 0.022 79.0 0.960 177.3 900 0.958 174.5 0.192 5.3 0.023 79.6 0.958 176.8 925 0.956 174.3 0.182 5.3 0.024 79.3 0.962 176.4 950 0.958 174.0 0.175 5.3 0.025 78.3 0.964 176.0 975 0.957 173.8 0.166 5.2 0.026 80.7 0.964 176.0 1000 0.959 173.6 0.158 5.7 0.026 78.8 0.962 175.8 s11 s21 s12 s22
silicon rf power semiconductors rd12mvp1 rohs compliance, silicon mosfet power transistor, 175mhz, 10w rd12mvp1 17 aug 2010 6/8 electrostatic sensitive device observe handling precautions rd12mvp1 s-parameter data (@vdd=7.2v, id=900ma) freq. [mhz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 100 0.799 -169.4 5.980 72.2 0.021 -11.2 0.757 -166.6 125 0.813 -170.7 4.690 65.9 0.020 -14.9 0.780 -167.5 150 0.825 -171.3 3.726 60.1 0.019 -17.2 0.785 -168.8 175 0.835 -171.9 3.045 55.9 0.017 -21.5 0.794 -169.3 200 0.846 -172.5 2.569 52.3 0.016 -22.4 0.821 -169.3 225 0.857 -173.4 2.206 48.4 0.015 -21.1 0.846 -169.5 250 0.868 -174.3 1.904 44.3 0.013 -21.2 0.863 -170.4 275 0.877 -174.9 1.648 40.7 0.011 -21.3 0.864 -170.9 300 0.886 -175.3 1.436 38.2 0.010 -19.9 0.864 -171.4 325 0.895 -175.7 1.270 35.8 0.009 -15.8 0.876 -172.0 350 0.900 -176.4 1.141 33.1 0.008 -11.9 0.891 -172.6 375 0.907 -177.3 1.023 30.4 0.007 -7.2 0.906 -173.1 400 0.909 -178.1 0.917 27.7 0.007 1.3 0.915 -173.9 425 0.913 -178.7 0.820 25.8 0.005 20.2 0.908 -174.4 450 0.921 -179.1 0.745 24.6 0.006 27.4 0.910 -174.5 475 0.925 -179.6 0.683 23.0 0.006 36.9 0.921 -175.2 500 0.932 -180.0 0.627 21.2 0.007 50.8 0.933 -175.9 525 0.931 179.2 0.575 19.4 0.007 53.6 0.937 -176.6 550 0.933 178.6 0.529 18.1 0.008 57.3 0.935 -176.8 575 0.937 178.0 0.486 16.6 0.009 67.9 0.931 -177.0 600 0.943 177.7 0.452 16.1 0.010 70.4 0.935 -177.4 625 0.943 177.3 0.422 14.9 0.011 70.9 0.945 -178.0 650 0.946 177.0 0.391 14.0 0.013 73.8 0.948 -178.6 675 0.947 176.6 0.366 12.7 0.013 75.6 0.946 -179.0 700 0.946 175.9 0.341 12.0 0.015 76.9 0.946 -179.3 725 0.951 175.5 0.322 11.3 0.015 75.8 0.945 -179.6 750 0.949 175.0 0.302 10.5 0.016 76.4 0.949 179.9 775 0.951 174.7 0.284 9.6 0.017 77.8 0.952 179.4 800 0.950 174.5 0.269 9.3 0.019 79.0 0.955 179.0 825 0.956 174.3 0.253 9.2 0.020 77.8 0.954 178.9 850 0.956 173.7 0.240 8.7 0.020 78.7 0.950 178.9 875 0.956 173.3 0.228 7.9 0.021 78.7 0.952 178.4 900 0.953 172.8 0.218 7.1 0.023 77.3 0.953 177.9 925 0.948 172.5 0.206 6.6 0.024 76.8 0.958 177.4 950 0.955 172.2 0.196 7.0 0.024 78.3 0.959 177.3 975 0.955 172.0 0.186 7.3 0.025 78.6 0.958 177.4 1000 0.957 171.8 0.178 7.1 0.026 79.1 0.956 177.1 s11 s21 s12 s22
silicon rf power semiconductors rd12mvp1 rohs compliance, silicon mosfet power transistor, 175mhz, 10w rd12mvp1 17 aug 2010 7/8 electrostatic sensitive device observe handling precautions attention: 1.high temperature ; this product might have a heat generation while operation,please take notice tha t have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. at the near the product,do not place the combustible material that have possibilities to aris e the fire. 2.generation of high frequency power ; this product generate a high frequency power. please take notic e that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3.before use; before use the product,please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. precautions for the use of mitsubishi silicon rf power devices: 1. the specifications of mention are not guarantee values in this data sheet. please confirm additional details regarding operation of these products from the formal specification sheet. for copies of the formal specification sheets, please contact one of our sales offices. 2. rd series products (rf power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. in particular, while these products ar e highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements. examples of critical co mmunications elements would include transmitters fo r base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, especially for systems that may have a high impact t o society. 3. rd series products use mosfet semiconductor technology. they are sensitive to esd voltage therefor e appropriate esd precautions are required. 4. in the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the rf-swing exceed the breakdown voltage. 5. in order to maximize reliability of the equipment, it is better to keep the devices temperature low. it is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temperature for rd series products lower than 120deg/c(in case o f tchmax=150deg/c) ,140deg/c(in case of tchmax=175deg/c) under standard conditions. 6. do not use the device at the exceeded the maximu m rating condition. in case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. these results causes in fire or injury. 7. for specific precautions regarding assembly of these products into the equipment, please refer to th e supplementary items in the specification sheet. 8. warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it?s original form. 9. for additional ?safety first? in your circuit design and notes regarding the materials, please refer the las t page of this data sheet. 10. please refer to the additional precautions in the formal specification sheet.
silicon rf power semiconductors rd12mvp1 rohs compliance, silicon mosfet power transistor, 175mhz, 10w rd12mvp1 17 aug 2010 8/8 electrostatic sensitive device observe handling precautions mitsubishi electric corporation puts the maximum effort in to making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with t hem. trouble with semiconductors ma y lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circ uits, (ii) use of non-flammable material or (iii) prevention agai nst any malfunction or mishap. keep safety first in your circuit designs ! - these materials are intended as a reference to assist our cu stomers in the selection of the mitsubishi semiconductor product best suited to the customer?s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to mitsubishi electr ic corporation or a third party. - mitsubishi electric corporation assumes no responsibility for any damage, or infringem ent of any third-party?s rights, origin ating in the use of any product data, diagrams, charts, programs, al gorithms, or circuit applicati on examples contained in these materials. - all information contained in these mate rials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are s ubject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact mitsubishi electric corporation or an aut horized mitsubishi semiconducto r product distributor for the latest product informatio n before purchasing a product listed herein. t he information described here may contain technical inaccuracies or typographical errors. mitsubishi electric co rporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay a ttention to information published by mitsubish i electric corporation by various means, including the mitsubishi semiconductor hom e page (http:// www.mits ubishichips.com). - when using any or all of the informati on contained in these materials, including pr oduct data, diagrams, charts, programs, an d algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. mitsubishi electr ic corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. - mitsubishi electric corporati on semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact mitsubishi electr ic corporation or an authorize d mitsubishi semiconductor product distributor when considering the use of a product contained herei n for any specific purposes, such as apparatus or systems fo r transportation, vehicular, medical, aer ospace, nuclear, or undersea repeater use. - the prior written approval of mitsubishi el ectric corporation is necessary to reprin t or reproduce in whole or in part these materials. - if these products or technologi es are subject to the japanese export control restrictions, they must be exported under a lice nse from the japanese government and cannot be imported in to a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. - please contact mitsubishi elec tric corporation or an authorized mitsubishi se miconductor product distri butor for further deta ils on these materials or the products contained therein. notes regarding these materials
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